1459826835-9d78b5cb-b2fc-4137-a936-2bdc34cba797

A vertical semiconductor device having a vertical channel region is disclosed. The device has a moveable member which may be a shaft, a sensor for measuring force applied to the shaft; and a resistance means to vary the resistance to movement of the moveable member such as an electric brake. Consequently, after completion of metering process and before injection process, the screw is moved forward after the screw has been rotated in reverse a predetermined amount to prevent resin backflow. Moreover, computation of the keep-alive value is performed only once for a given NAT device rather than being an on-going process for that NAT device. The invention also provides a process in which a reactant is converted to a product by passing through a reaction chamber containing the catalyst. This invention further relates to the use of the compounds of this invention for mediating the bone modeling and remodeling processes of the osteoblasts and osteoclasts.