Systems and methods are provided for fabricating a static random access memory cell in a multi-layer semiconductor device structure. The non-volatile memory device includes a first conductivity type semiconductor substrate, a first conductivity type inversion layer-forming region, second conductivity type accumulation layer-forming regions, second conductivity type regions, an insulating film and a first conductive layer formed on the inversion layer-forming region. The process according to the invention for the surface treatment of a component proposes that at least repeatedly a measurement voltage be applied to the component, resulting in the flow of a current, the time profile of which represents the state of the surface treatment and is used to decide upon when to terminate or interrupt the acid treatment. The plurality of fibers can be a plurality of nanofibers which may or may not be oxide nanofibers.