Methods of manufacturing a nitride trapping EEPROM flash memory are described where each memory cell uses Si-FIN to form a nitride trapping EEPROM flash cell in which the source region and drain region are undoped. The method is capable of forming a high-refraction layer even in low-temperature vapor deposition on a substrate. The patterns are spaced apart from one another by a predetermined distance and are formed about the circumference of the driveshaft. At least two of the sending rates result in multiple overloading streams of packets being sent to the receiver. In order for the cable or cable bundle to be held simply and reliably even when the course of the cable is highly curved, it is provided for the clamping element to be secured on the holding element such that it is rotatable about a radial axis of the pipe. Also disclosed are methods for controlling an invertebrate pest comprising contacting the invertebrate pest or its environment with a biologically effective amount of a compound of Formula 1, an N-oxide thereof or a suitable salt of the compound.