A method is provided for altering distribution of a chosen characteristic of a plurality of memory cells forming a memory device. Furthermore, the present invention includes the electrochemical iodination of 3, 5- disubstituted anilines of formula to the corresponding 3,5-disubstituted-2,4,6-triiodoanilins of formula. The determined electroplating voltage can then be maintained while electroplating the metal from the electroplating solution on the conductive surface. In addition, the network component can include an action implementation unit configured to implement at least one first action with respect to the packet when at least one of the plurality of packet field values falls within a corresponding pair of range values for one of the plurality of entries. Since a portion of drain electrode that overlaps with the gate electrode has a smaller width than a width of other portions of the drain electrode, variation in an area of the drain electrode overlapped with the gate electrode is small, so that variation of the parasitic capacitance can be reduced, thereby improving picture quality.