The present invention teaches a method of forming a MOSFET transistor having a silicide gate which is not subject to problems produced by etching a metal containing layer when forming the gate stack structure. The incompatible filler provides domains in the polyester matrix, each domain having a particular dimension, thus providing a range of dimensions for the domains in the article. Each client has software that runs on the client. The routing layer includes conductive traces at least partially surrounding some pads so as to absorb stress from solder bumps attached to the pads. Afterwards, the sacrificial layer is removed so as to form a cavity between the microstructure and the protective layer. Reaction plates, reaction plate assemblies, and nucleic acid analysis apparatuses are provided.