A semiconductor memory device according to an embodiment comprises a memory cell array configured from a plurality of row lines and column lines that intersect one another, and from a plurality of memory cells disposed at each of intersections of the row lines and column lines and each including a variable resistance element. The imageable structure is configured to assist in the rotational orientation of the prosthesis during placement within the implantation site. In certain embodiments, the array of pixels is divided into a plurality of pixel groups. Based on the model, an occurrence time of a steam pop event caused by the steam pressure is predicted, and the predicted occurrence time of the steam pop event is indicated to an operator. The die and laminated conductor are secured to the interposer such that the laminated conductor mechanically supports the interposer and supplies current to the die.