A high density vertical merged MOS-bipolar-capacitor gain cell is realized for DRAM operation. In one embodiment, a bit structure is encapsulated by means of an etch stop barrier material. Then, a voltage is applied to the semiconductor or the conductor 1 and the 2nd conductor 4 so as to measure a time elapsing until the insulator 2 undergoes a dielectric breakdown. The divided system has no mechanical, electrical or electromagnetic connections between the control circuits. The radiation can be for any purpose including inspection, processing, patterning and so on. The SI handler acquires channel configuration information of the mobile service data from the broadcast signal using pre-decided IP access information, and extracts encoding format information for each IP stream component within a corresponding virtual channel service RTP-packetized and received from the acquired channel configuration information.