A single polycrystalline silicon floating gate nonvolatile memory device has a storage MOS transistor and at least one polycrystalline-insulator-polycrystalline or metal-insulator-metal capacitor manufactured with dimensions that can be fabricated using current low voltage logic integrated circuit process. The second substrate faces the first substrate, and includes a display area which displays an image, and a non-display area surrounding the display area. Radial ports in the outer sleeve provide selective circulation of fluid from the tool and by closing these ports with the sleeve fluid pressure in to the downhole tool can be controlled. The second power transmission has a drive ratio such that if there is no first rotary motion, a first cable is drawn in by the first capstan at the same rate as a second cable is drawn in by the second capstan in response to the second rotary motion. The separator device is provided with a measurer for measuring the temperature of the wall of the vessel.