A chemical-mechanical jet etching method rapidly removes large amounts of material in wafer thinning, or produces large-scale features on a silicon wafer, gallium arsenide substrate, or similar flat semiconductor workpiece, at etch rates in the range of 10-100 microns of workpiece thickness per minute. More particularly, it concerns specific derivatives of 1-alkenyl cyclopentanol, or 1-alkenyl cyclohexanol, wherein the alkenyle group is branched. The load circuit AC voltage, the load circuit alternating current, or both the load circuit AC voltage and the load circuit alternating current are generated from an AC voltage signal that is amplitude-modulated with a frequency of a mains AC voltage from a voltage supply. The data includes metabolite concentrations and molar ratios of metabolites with other metabolites.