According to one embodiment, a power amplification apparatus includes an field effect transistor, a first decoupling element, a power supply circuit, a second decoupling element, and a third decoupling element. The method employs a test structure comprising a meander of the material of a first layer of the semiconductor device, deposited relative to a conductive line. From the received packets, each RS calculates its reliability value according to a reliability function, which it informs the MS.