The present invention provides a method of fabricating a silicon fin useful in preparing FinFET type semiconductor structures. A phase of a signal may be shifted between 0\xb0 and 360\xb0 for all frequencies of the signal, without any significant delay distortion. The collection and transmission of usage data may be governed by and conform to a privacy agreement and may be collected when an end user agrees to such collection. Advantageously, the duplication manager is executed on a different processor core than the application process executing transactions, further improving performance. In one embodiment, the first durometer hardness is less than OO60 as measured by the Shore method, and the second durometer hardness is in the range of A20 to A60 as measured by the Shore method.