Device leakage due to spacer undercutting is remedied by depositing a BPSG, SA-CVD oxide liner and flowing it into the undercut regions, followed by gap filling with a P-doped HDP oxide layer. Preferably, the dendrimeric compound is a hyperbranched polyester amide, more preferably a polyester amide built up from succinic anhydride, diisopropanolamine, functionalised with poly succinic anhydride. Stages can be used to formalize and automate the flow of digital assets along the process.