A method of manufacturing metal to glass, metal to metal and metal to ceramic connections to be used in SOFC applications, said connections being produced as a mixture of a base glass powder and a metal oxide powder. The gate dielectric for these peripheral transistors and the gate dielectric for the select gates are formed, simultaneously. The final model parameters, balanced with respect to measuring and modeling uncertainties, are applied to model a new set of measurements. The ingress network device can retransmit the packet to the egress network device if the packet is dropped in the network tunnel. Results from a comparison of the SR output and the recordings may also be evaluation by the pronunciation issue detector.