A method of semiconductor device fabrication includes forming a first dummy gate structure in a first region of a semiconductor substrate and forming a second dummy gate structure in a second region of the semiconductor substrate. n\u2032H2O or a salt thereof, which characteristically includes crystallization from an organic solvent solution or suspension in which -2-3-methyl-4–2-pyridylmethylsulfinylbenzimidazole. A secure USB domain device is coupled to a host computer or is embedded within a host computer. The raised section contains a shallow slot which, in turn, holds a tapered tunnel. In other embodiments, the joined components can be a battery cell and a housing component.