A built-in memory is divided into the following two types: first memories 5 and 7 and second memories 4 and 6, and made accessible in parallel by third buses XAB and XDB and second buses YAB and YDB respectively. At least part of the dielectric layer and pattern form the first, base portion of an organic memory device, the remaining portion being a second, polymer layer formed over the part of the pattern and a second conductive circuit formed on the polymer layer. A ratio of the component to the barrier material is not less than about 0. For example, the Ti MMO anode assembly may be applied to protect pipelines, buried structures, piers and internal surface protection of tanks and vessels in different arrangements such as deep wells, shallow ground beds, or distributed individual anodes.