A method of forming a contact in a semiconductor device provides a titanium contact layer in a contact hole and a MOCVD-TiN barrier metal layer on the titanium contact layer. In one example, a method includes generating a near-optimal power pattern for PC and scheduling in accordance with long term channel statistics. The engagingabutting surfaces of the joints form interference, watertight fits to join the links in end-to-end relation to any desired length and enabling the tube assembly to be transversely bent by a person into different stable shapes.