A memory circuit has a high voltage and low voltage supply nodes. The method also includes grouping the cans into two or more groups according to their respective dynamic operating conditions and identifying a sensor providing an anomalous dynamic operating condition reading for at least one of the cans. The device is formed of a magneto-resistant material easy to match a semiconductor fabrication process. The blade mounting structure includes an arm for connecting a single one of the straight frames and the blade to be swingable up and down and to the left and the right.