An embodiment of the invention is a transistor formed in part by a ferromagnetic semiconductor with a sufficiently high ferromagnetic transition temperature to coherently amplify spin polarization of a current. At least a part of the third chamber is formed to extend over essentially about 360 degrees around a cross sectional area of the housing. The transparent electrically conductive material affixed to the exterior surface of the glass envelope can comprise one or more stripes of the material so that less than the total exterior surface area of the glass envelope is covered by the transparent electrically conductive material.