The present invention provides a catalyst structure of high catalytic activity and a fuel cell of high cell output. Small source, drain and gate openings are etched in a thin dielectric layer which has a thickness set according to the desired source, gate and drain opening sizes, said dielectric layer having a nitride top layer. The third portion of the ATM address may alternatively be determined using a different method, so long as selection of the third portion causes each device to be assigned a unique ATM address by default. For example, the freehand gestures may comprise input instructions for selecting, translating, and rotating the shape of an object. Additionally, supplemental content is identified and inserted into the presentation stream during presentation.