The present invention relates to a metal-semiconductor contact comprising a semiconductor layer and comprising a metallization applied to the semiconductor layer, a high dopant concentration being introduced into the semiconductor layer such that a non-reactive metal-semiconductor contact is formed between the metallization and the semiconductor layer. The method can include taking a first channel measurement corresponding to a first antenna of a wireless terminal and taking a second channel measurement corresponding to a second antenna of the wireless terminal. During this process, a source structure for the local interconnect is formed.