A semiconductor device is made by steps of removing portions of a first capping layer, removing portions of a sacrificial layer, recessing sidewalls, and forming fin structures. Embodiments herein relate to methods to generate a set of LDPC codes that share their wires as much as possible and therefore reduce the silicon area and ease the routing. Here, T1 includes a transition metal Mo, T2 includes a transition metal W, M2O includes Li2O, Na2O, or two or more of Li2O, Na2O, K2O, Rb2O, and Cs2O including metals having +1 valence electrons, and amounts of M2O and ZnO are not simultaneously \u201c0\u201d. Processes for producing the polyester resins are also disclosed. In one embodiment, acting on the motion data comprises automatically taking a picture when the motion state is at a particular level. The lamellar nanoparticles are synthetically made in a one-step operation by supramolecular assembly of a surfactant and a inorganic precursor and are exfoliated inside the polymer matrix.