1460481218-cc8be3bc-3be6-47eb-841d-a7ee5d444f6f

In a semiconductor laser device having an oscillation wavelength of larger than 760 nm and smaller than 800 nm, on an n-type GaAs substrate, there are stacked in sequence an n-type first and second lower cladding layers, a lower guide layer, a strained InGaAsP multiquantum well active layer, an upper guide layer, and a p-type upper cladding layer. A controller controls a motion of the moving parts and has an inhibit input that inhibits the motion. Said compounds exhibit in vivo preferential activity on bones as compared to the uterus andor significant activity with regard to stimulating the expression of 5HT2a-receptors and transporter molecules.