A resistive random access memory system includes a plurality of bitlines, a plurality of wordlines, and an array of resistive random access memory cells. The current circuit has windings wrapped around a toroidal member of magnetic material having a cross sectional gap. The transistor cell further includes a shallow surface doped regions disposed near a top surface of the drift layer under the gate adjacent to the JFET diffusion region wherein the shallow surface doped region having a dopant concentration lower than the JFET diffusion region and higher than the drift layer. The invention also concerns the additive per se. The control unit is supplied with an internal voltage through a voltage regulator and a bistable multivibrator is connected ahead of the voltage regulator in the external voltage supply of the control unit, and, whereby a microcomputer is connected with the multivibrator and is integrated in the control unit.