The computational resources needed to perform processes such as image recognition can be reduced by determining appropriate frames of image information to use for the processing. Then the oxide-nitride-oxide layers are formed on the semiconductor substrate, wherein the nitride layer is a charge trapping layer. Preferably adjacent plates are spaced so that as the mixture passes between two plates it contacts the surface above it as well as the surface below it. In a preferred arrangement, the device is provided with an automatic mode of operation including a reclose process and a non-reclosing mode of operation. Such an isolation resistor between a current carrying terminal of a switching bipolar transistor and a current source may be used in various applications, including an emitter follower. It is thus possible to dispense with thermal steps such as soldered connections or welded connections and to therefore make savings in terms of time and on the complexity of the apparatus used.