In a process for forming a silicon-based film on a substrate according to the present invention, the substrate has a temperature gradient in the thickness direction thereof in the formation of the silicon-based film and the temperature gradient is made such that a deposition surface of the substrate has a higher temperature than a backside or the direction of the temperature gradient is reversed. More particularly, the estimated location, and in some examples the estimated heading, of a client device may be displayed on a display of the client device. After random or arbitrary characters are used to encrypt an initial message, each new message communicated between two devices is encrypted with the most recent message communicated there-between as well as the changing key. The control terminal is connected to a hot plug detect pin of the DVI-I connector to detect a voltage and correspondingly control the second terminals to be respectively connected to the two first terminals connected to the clock and data pins of the first DDC or the second DDC. When the count is less than N, the power-off pin outputs a low level signal, so that the output pin of the AND gate outputs a low level signal, and the transistor turns off.