A method and apparatus for identifying crystal defects in emitter-base junctions of NPN bipolar transistors uses a test structure having an NP junction that can be inspected using passive voltage contrast. Embodiments include adjustable height drainage systems that are vertically adjustable to controllably place the height of the drainage system above, below or flush with one or more surrounding floor or fenestration portal surfaces. reducing or eliminating the burden of manual user entry of the account information or the like into the mobile device.