A method of forming a semiconductor structure includes providing a substrate; forming a low-k dielectric layer over the substrate; embedding a conductive wiring into the low-k dielectric layer; and thermal soaking the conductive wiring in a carbon-containing silane-based chemical to form a barrier layer on the conductive wiring. Optical isolators which block C-band ASE travelling in an opposite direction to L-band signal light, are inserted on the amplification medium of each of the optical amplification sections. One of the precursors may be associated with a soft saturating atomic layer deposition half reaction and another of the precursors associated with a strongly saturating atomic layer deposition half reaction. A pump housing is positioned to receive water flow from the propeller and direct the water flow to a nozzle outlet.