A method of forming a composite gate structure for a planar MOSFET device, as well as for vertical, double gate, FINFET device, has been developed. The slurry composition comprises deionized water and iron or an iron compound. The distance is compared to a first predetermined distance and a second predetermined distance. A needle holding member is arranged in an area of the front end of the movable member. An annular magnet 3 is buoyantly supported by the magnetic fluid 4 and 5 retained, and the space between a housing 1 and a shaft 2 is sealed by the annular magnet 3 and magnetic fluid 4 and 5. A nail portion is formed at one end of the locking section, for engagement with FPC, and a power point portion on which a pivotal force of the actuator acts is formed at the other end.