An ion sensitive sensor having an EIS structure, including: a semiconductor substrate, on which a layer of a substrate oxides is produced; an adapting or matching layer, which is prepared on the substrate oxide; a chemically stable, intermediate insulator, which is deposited on the adapting or matching layer; and an ion sensitive, sensor layer, which is applied on the intermediate insulator. Driving of the primary is via an isolating stage that minimizes low level drive signal coupling. The planar photoluminescent lamp also includes a first electrode and a second electrode.