A method includes forming an opening in a dielectric layer, and forming a silicon rich layer on a surface of the dielectric layer. The electromagnetic environment is described by a scalar electric potential and a magnetic vector potential. The trench isolation structures may be formed from dielectric-filled trenches in the substrate that isolate the portion of the substrate having the analog circuitry from the portion of the substrate having the digital circuitry. After that period of time expires, only a weak reference is held by the client JVM and the connection may be garbage collected.