In a deep-ultraviolet tight source includes sapphire substrate, a wide band gap semiconductor layer having a wavelength smaller than 300 nm, formed on the sapphire substrate, and en electron beam source for irradiating the wide band gap semiconductor layer with an electron beam. Further, a method and receiver, the method receiving a burst, performing a discrete Fourier transform on the burst, choosing a training sequence among a known plurality of training sequences sets, the chosen training sequence resulting in the least noise estimate among the plurality of training sequence sets, and demodulating the burst with the detected pilot burst. The soft metal oxide film is less electrically resistive than the hard metal oxide film since the soft metal oxide film is less oxidized or more metallic than the hard metal oxide film. Thereafter, the molten metal is moved in a vertical direction by means of a follower plunger and is then inserted into the casting space. Different colors are selected for printing during the different segments by varying the fraction of subintervals that contain pulses. The present invention verifies that a redundant path exists prior to moving the WWNN and WWPN.