A cross method for fabricating a CMOS integrated circuit includes providing a semiconductor wafer having a topside semiconductor surface, a bevel semiconductor surface, and a backside semiconductor surface, wherein the bevel semiconductor surface and backside semiconductor surface include silicon or germanium. A double-sided adhesive foam tape is provided on an interior wall of the channel section to bond the molding to a glass panel received within the channel. An idle signal is sent on each restoration channel for each link. In addition, one or more depressions may be at least partially disposed within the reinforcement portions, if desired. The upper bearing guide includes a bearing portion and a contacting portion.