A method for forming a Cu thin film on a substrate includes a Cu-CVD step forming a first copper film on predetermined surface of a substrate by a CVD process and a plating step further forming a second copper film on the first copper film by an eletrolytic copper plating process using the first copper film as an electrode. The support members are permanently affixed to said carrier base and comprise elongated portions with their free ends bent toward the vertical center axis of the carrier base and said upper ends providing a support surface for making supportive contact to the test tube. A first installation account within a first installation is created, the first installation account having second installation account information relating to a second installation. Attached to the top surface is a semiconductor die which is electrically connected to at least some of the leads.