A semiconductor device that has a common border between P and N wells is susceptible to photovoltaic current that is believed to be primarily generated from photons that strike this common border. The piston is located at the stroke end of the forward side when its end face of the forward side is contact with the end face of the backward side of the movable stopper. 3-compliant PHY via a switch; the switch determining whether data transmission is be routed to the IEEE 802. Therefore, the floating diffusion layer may not be attacked by an etching during a formation of sidewall spacers of various gates or by ion implantation during a formation of a junction region of a DDD or LDD structure, thus reducing a leakage current and a dark current at the floating diffusion layer. The first cheek plate is trapped against the second cheek plate by at least one rigid annular gusset which is welded against the inner face of the second cheek plate.