When forming sophisticated gate electrode structures requiring a threshold adjusting semiconductor alloy for one type of transistor, a recess is formed in the corresponding active region, thereby providing superior process uniformity during the deposition of the semiconductor material. The first carcass ply 9 has a body portion 9A extending from a tread portion 2 to a bead core 5 through a sidewall portion 3, and a wound up portion 9B which is folded back from inside to outside around the bead core 5. The identifier is provided to the application program, which uses it as an identifier of a record of a database if such a record is created.