1460516760-d53af2b6-3569-4fb2-a690-aac9731063a8

An apparatus including a contact point formed on a device layer of a circuit substrate or interconnect layer on a substrate; a first dielectric layer including cubic boron nitride on the substrate; and a different second dielectric layer on the substrate and separated from the device layer by the first dielectric layer. Scanning methods employed ensure that volume revisit times are suitably short and track data produce 3D target trajectories. The thickness of the second magnetic layer is made larger than the thickness of the third magnetic layer and the total for the concentrations of cobalt and platinum obtained in the second magnetic layer is not more than the total for the concentrations of cobalt and platinum contained in the third magnetic layer. The opening is formed through an insulation structure located on a substrate. The polarizing plate is formed at a face, which is an opposite side of the second substrate, of the second elastic layer.