A floating gate is formed on a semiconductor substrate via a gate insulating film. According to one embodiment of the invention, a semiconductor-on-insulator structure has a first layer including a semiconductor material, attached to a second layer including a glass or glass-ceramic, with the strain point of the glass or glass-ceramic equal to or greater than about 800\xb0 C. the hair roots and a diluted hair colouring composition is applied to the hair, e. The sliding member is disposed on an inner side of the casing in a slidable manner.