An integrated circuit containing an extended drain MOS transistor with deep semiconductor RESURF trenches in the drift region, in which each deep SC RESURF trench has a semiconductor RESURF layer at a sidewall of the trench contacting the drift region. A mass is formed over the aluminum-containing material, with the mass predominantly comprising a metal other than aluminum. Also included is a phase detector configured to receive the first clock signal and an output from the first variable-delay block, and an updown counter configured to receive an output from the phase detector. Conceptually, the focus would need to be systematically computed and propagated along the recursive execution of XSLT templates. As a result, microscopic flaws, unevenness, and foreign matter that cannot be detected by the conventional dark field observation can be observed and directional flaws can be observed. When it is desired to package, transfer or store the ceiling fan, the guide head with the ceiling lamp is pulled out from the ceiling fan.