The invention provides a semiconductor device that has a fully depleted MOSFET and a partially depleted MOSFET having excellent characteristics on the same substrate without effecting control by means of the impurity concentration of the channel region. These lock cohorting techniques may reduce the rate of lock migration by relaxing the order in which the lock schedules the execution of critical code sections by various threads, allowing lock ownership to remain resident on a single NUMA node longer than under strict FIFO ordering, thus reducing coherence traffic and improving aggregate performance. The method comprises a step of forming a texture in a major surface of a disk-shaped glass substrate by lapping the major surface with a lapping member while supplying an abrasive material onto the major surface. The groove applique may be secured within each of the elongated grooves with a plurality of securing components placed along the length of the elongated groove. The method includes steps of a) producing a barium fluorotitante powder by mixing a hexafluorotitanic acid solution and a barium nitrate solution at a low temperature, b) dissolving the barium fluorotitante powder into water and mixing with a boric acid solution, and c) immersing a silicon wafer into the mixture at a low temperature to grow a barium titanate thin film on the silicon wafer.