A memory device formed from selectively deposited PGO and a method for selectively forming a Pb5Ge3O11 thin film memory device are provided. The invention also provides antisense nucleic acid molecules, recombinant expression vectors containing 2466 nucleic acid molecules, host cells into which the expression vectors have been introduced, and nonhuman transgenic animals in which a 2466 gene has been introduced or disrupted. The method continues with the processing module obtaining error coding dispersal storage function parameters when a dispersal method of the subscription response message indicates direct dispersal. The at least one inactive zone includes a semiconductor region of the second conductivity type formed in the substrate and adjacent a surface of the substrate, a conductive layer located over the semiconductor region, and a silicon oxide layer located between the semiconductor region and the conductive layer. The contact member contacts a portion of the housing adjacent to the opening and is electrically coupled to the communication arrangement so that a perimeter of the opening in the housing acts as a part of an antenna to receive andor transmit signals for the communication arrangement.