A non-volatile memory device comprising a plurality of memory cells, each memory cell formed as MOS transistor with a source region, a drain region and a gate having sides formed therewith; and one or more dielectric spacers disposed on the sides of the gate. The stopping means has a projecting portion projecting from the mounting portion toward the displacing member in order to abut against an end plane of the displacing member thereby to check the abutment of the first and second patterns. The weapon station may have both electrically-powered and manually-powered drive systems for rotating a pedestal about an azimuth axis relative to the vehicle, and for rotating weaponry and operational units about the elevation axis, wherein the electrical and manual drive systems transmit power through the same output gear. The method further includes rotating the articles within the tub, and spinning the articles within the tub.