A gas-insulated equipment such as a gas-insulated switchgear provided according to the invention can efficiently improve dielectric strength of an entire electrode system considering electric field distribution of the electrodes and conductors and improving insulation coordination so that miniaturization of the entire device can be achieved. The second portion of the semiconductor substrate is recessed from the first top surface to form a fin of the multiple-gate transistor. Direct plated copper films exhibit preferred orientation with the use of medium acid level electrolyte and higher plating current density during the copper electrochemical deposition process.