The present invention relates to a metal-semiconductor contact comprising a semiconductor layer and comprising a metallization applied to the semiconductor layer, a high dopant concentration being introduced into the semiconductor layer such that a non-reactive metal-semiconductor contact is formed between the metallization and the semiconductor layer. The anisotropically conductive connector is an anisotropically conductive connector having an elastic anisotropically conductive film, in which a plurality of conductive parts for connection extending in a thickness-wise direction of the film have been formed. A first doped-type region and a second doped-type region are formed on both sides of the trench.