A non-volatile memory device includes a first select transistor, a second select transistor, and a first string of first memory cells provided between the first and second select transistors. The account includes a contact identifier used for communicating with the first member outside of the virtual community. The connector’s outer shell also includes a relatively high CTE portion that allows the shell to be readily joined as by welding to an adjacent support structure, such as a relatively high CTE aluminum housing and the like. The second line ranges from 100 to 400 mm in length. The shielding electrodes are located above the data lines and electrically connected to a common voltage. The energy input to the gasification is correspondingly reduced to reduce costs and the environmental impact associated with the gasification process.