A semiconductor light emitting device includes a lead frame made of a material having a thermal conductivity not higher than 100 W, and a gallium nitride compound semiconductor light emitting element mounted on the lead frame. The drug coating layer can provide low toxicity and a high intravascular stenosis inhibitory effect. The assembling stage has a through groove, an elastic blocking slice, and a first fastening groove which is formed at one side edge of the elastic blocking slice. The inventive device for carrying out said method comprises a forming chamber, which is made of a microwave transparent material, filled with the mixture of pre-foamed or granulated foaming polymer or a composition based thereon with water and is placed in a microwave radiation producing channel, and a unit for equalising a pressure in said forming chamber. A positive voltage is applied to the wafer through the outer voltage ring to remove the plated metal from the outer, edge region of the substrate.