1460645872-b4ec5ff6-9c32-4b4e-8991-a19cfce7ab14

A semiconductor device formed on a SOI substrate includes isolation trenches formed in a first region and reaching an insulation layer buried in the SOI substrate, and alignment marks formed in a second region and consisting of grooves extending into a support substrate. A controller is configured to detect indicia of impending mechanical motor faults. The section is configured to produce, during systole, a non-turbulent blood flow into the aorta with pressure recovery at the downstream end of the section.