This invention relates to a method for manufacturing a flash memory, more particularly, to the method for manufacturing the contact in a flash memory with buried conductive line. No film made of liquid lubricant is disposed on the surface of the medium. At least a portion of the coiled member is secured to the outer surface of the cannula. Further, the dc offset correction signal, partially delayed, may be added to the error signal, thereby improving the response time of the dc offset correction loop. Examples of metal compounds employed in this process include materials such as Si4, Ti4, 2)2, and the like. A sinusoidal signal is applicable at the input of the amplifier.