Processes for etching PZT andor forming a ferroelectric capacitor with IrIrOx electrodes and a PZT ferroelectric layer use a titanium-containing hard mask, a chlorineoxygen-based plasma, and a hot substrate, typically at about 350 C. In the case where a defect develops in one load lock chamber of the substrate processing device, the movement of substrate support trays between these chambers is continued without using the one load lock chamber associated with the defect. In this method, uncured epoxy-based syntactic foam is prepared and infiltrated into an open-cell scaffold. , window, is easier to maintain because scratches can be polished out of the surface.