A method and system for qualifying an oxide-nitride-oxide layer including a first oxide layer, a nitride layer and a control oxide layer in a semiconductor device is disclosed. The tantalum-tungsten oxide film is deposited on a substrate under an atmosphere of a mixture of the first material gas comprising tantalum, the second material gas comprising tungsten and an oxidizing agent. The potential customer may be notified of several vendors associated with different vendors. The fiber-based constituents permit the formation of rigid porous structures for filtration, insulation, and high temperature processes and chemical reactions.