One embodiment of the present invention sets forth a technique for capturing and holding a level of an input signal using a low-clock-energy latch circuit that is fully static. The FTP storage element includes a set of N elementary memory units and multiple selection circuits. aSibAlOcNd\u2003\u2003formula 1wherein x, a, b, c and d satisfy following condition:0<x\u22660. The hollow opening is formed at the center of the head lift body to accommodate a backlash preventing mechanism. The semiconductor device can prevent the current consumption due to off-leakage components and static current components generated at internal analog circuits in the power down mode.